Properties of high voltage stress generated traps in thin silicon oxides
- 1 January 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
It has been shown that trap generation inside thin oxides during high voltage stressing can be coupled to time-dependent-dielectric-breakdown distributions through the statistics linking wearout to breakdown. Since the traps play a crucial role in the wearout/breakdown process, it is important to understand the properties of these traps. Oxides with thicknesses between 2.5 nm and 22 nm have been studied with emphasis on oxides in the 6 nm to 13 nm thickness range. The cross-section of the traps responsible for the scattering of electrons in the tunneling barrier, the spatial and energy distribution of the traps, and the charging/discharging properties of the traps have been measured. It will be shown that all of the measured properties of the traps can be adequately described by electron flow into and out of traps that were generated by the application of high fields to oxides, without resorting to describing the traps or trap generation in terms of the flow of holes or in terms of impact ionization processes.Keywords
This publication has 31 references indexed in Scilit:
- The superposition of transient low-level leakage currents in stressed silicon oxidesSolid-State Electronics, 1995
- The Transient Nature of Excess Low‐Level Leakage Currents in Thin OxidesJournal of the Electrochemical Society, 1995
- Modeling ultrathin dielectric breakdown on correlation of charge trap-generation to charge-to-breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Degradation and breakdown of silicon dioxide films on siliconApplied Physics Letters, 1992
- The polarity, field and fluence dependence of interface trap generation in thin silicon oxideSolid-State Electronics, 1992
- A statistical model of oxide breakdown based on a physical description of wearoutPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide filmsIEEE Transactions on Reliability, 1991
- Degradation and Breakdown of Gate Oxides in VLSI DevicesPhysica Status Solidi (a), 1989
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978