Theoretical evidence for efficient p-type doping of GaN using beryllium

Preprint

24 February 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9610108

Abstract

Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be_3N_2. We show however that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in MOCVD growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at MBE growth temperatures.

Keywords

AB INITIO CALCULATIONS
THEORETICAL EVIDENCE
CO INCORPORATION
USING BERYLLIUM
TYPE DOPING
GAN USING
GROWTH

All Related Versions

Version 1, 1996-10-14, ArXiv
Version 2, 1997-02-24, ArXiv
Published version: Applied Physics Letters, 70 (22), 2990.

This publication has 0 references indexed in Scilit: