Theoretical evidence for efficient p-type doping of GaN using beryllium
- 2 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (22) , 2990-2992
- https://doi.org/10.1063/1.118766
Abstract
Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be3N2. It is shown, however, that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in metal-organic-chemical-vapor deposition growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at molecular beam epitaxy growth temperatures. (C) 1997 American Institute of PhysicsKeywords
All Related Versions
This publication has 5 references indexed in Scilit:
- High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopantApplied Physics Letters, 1996
- Role of hydrogen in doping of GaNApplied Physics Letters, 1996
- Hydrogen in GaN: Novel Aspects of a Common ImpurityPhysical Review Letters, 1995
- Theoretical study of H-P and H-B complexes in siliconPhysical Review B, 1995
- First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSePhysical Review B, 1993