Theoretical evidence for efficient p-type doping of GaN using beryllium

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  • 14 October 1996
Abstract
Ab initio density-functional calculations predict that Be in GaN is a substitutional single acceptor with a thermal ionization energy of 0.06 eV, and therefore the shallowest p-dopant reported so far in this material. The Be solubility in GaN is severely limited by the formation of Be_3 N_2. We show however that co-incorporation with hydrogen or oxygen can be exploited to strongly enhance the solubility. In H-assisted incorporation, the acceptor remains compensated, while Be-O co-incorporation leads to efficient p-doping in N-rich conditions at MBE growth temperatures.

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