A study of parasitic reactions between NH3 and TMGa or TMAI
- 1 June 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (6) , 1004-1008
- https://doi.org/10.1007/bf02666736
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodesJournal of Applied Physics, 1994
- Metal-organic vapor phase epitaxy of compound semiconductorsMaterials Science Reports, 1987
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- Kinetics of GaAs growth by low pressure MO-CVDJournal of Electronic Materials, 1984
- Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindiumApplied Physics Letters, 1984
- Metal organic vapour phase epitaxy of indium phosphideJournal of Crystal Growth, 1983
- OMVPE growth of InP using TMInJournal of Crystal Growth, 1983
- GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applicationsJournal of Crystal Growth, 1981
- The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’SJournal of Electronic Materials, 1980
- The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenicJournal of Electronic Materials, 1980