Growth of InGaAsP by molecular beam epitaxy
- 1 December 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11) , 1073-1075
- https://doi.org/10.1063/1.93405
Abstract
Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption, electroreflectance, x‐ray diffraction, reflection electron diffraction, and Hall measurements. Lattice matching was achieved and room‐temperature mobilities up to 4600 cm2 V−1 s−1 were measured.Keywords
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