A technique for the growth of single crystal films of zinc sulphide on (100) gallium arsenide by radio frequency sputtering

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Abstract
Thin films of single crystal cubic zinc sulphide has been grown on (100) oriented gallium arsenide substrates by a radio frequency sputtering technique. The sputtering system is of novel design, being constructed to UHV standards and capable of producing oil-free ultraclean conditions during the sputtering process. A balanced RF oscillator drives the water cooled disc and annulus electrodes to which sintered powder ZnS targets are bonded with an indium-gallium eutectic. Highly ordered films are grown at rates of up to 100 nm h-1 at temperatures between 250 degrees C and 300 degrees C.