Fabrication of SOI wafers with buried cavities using silicon fusion bonding and electrochemical etchback
- 1 June 1996
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 54 (1-3) , 709-713
- https://doi.org/10.1016/s0924-4247(97)80043-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Study of electrochemical etch-stop for high-precision thickness control of silicon membranesIEEE Transactions on Electron Devices, 1989
- Potential and current distributions along resistive electrodesJournal of Applied Electrochemistry, 1988
- Electrochemical etch-stop control for silicon structures containing electronic componentsJournal of Applied Electrochemistry, 1988