Radiation Effects on Signal and Noise Characteristics of GaAs MESFET Microwave Amplifiers
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6) , 5092-5099
- https://doi.org/10.1109/TNS.1979.4330279
Abstract
The effect of fast neutron and gamma radiation on the electrical characteristics of low noise microwave GaAs MESFET amplifiers has been evaluated. The change in the noise figure and gain at S- and X-band was determined at neutron fluences between 3×1012 to 1×1015 n/cm2 and gamma dose of 2×107 rads (Si). The radiation induced changes are described and the causes for them are discussed.Keywords
This publication has 4 references indexed in Scilit:
- Radiation Effects on GaAs MESFETsIEEE Transactions on Nuclear Science, 1978
- Effect of neutron and gamma irradiation on the low-frequency noise in GaAs m.e.s.f.e.t.sElectronics Letters, 1978
- GaAs MESFET Small-Signal X-Band AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1976
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975