Phosphorus diffusion in polycrystalline silicon
- 15 February 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 1218-1220
- https://doi.org/10.1063/1.333166
Abstract
The diffusion of phosphorus in crystallized amorphous Si layers was studied with secondary-ion mass spectroscopy. A two-dimensional diffusion model is used to find effective grain (Dg) and grain-boundary (Dgb) diffusion coefficients. This simplified model leads to Dgb ≤ 10Dg, which is significantly lower than what has been deduced from conventional, larger grained polysilicon. Our result is consistent with specific-gravity measurements, which found a significantly lower ‘‘mass defect’’ for layers deposited amorphous and subsequently crystallized as compared to initially polycrystalline layers.This publication has 12 references indexed in Scilit:
- High quality polysilicon by amorphous low pressure chemical vapor depositionApplied Physics Letters, 1983
- Diffusion characteristics of boron and phosphorus in polycrystalline siliconThin Solid Films, 1983
- Scanning transmission electron microscope microanalytical study of phosphorus segregation at grain boundaries in thin-film siliconApplied Physics Letters, 1982
- Diffusion of arsenic in polycrystalline siliconApplied Physics Letters, 1982
- The annealing behavior of antimony implanted polycrystalline siliconApplied Physics Letters, 1982
- Optical properties of phosphorus-doped polycrystalline silicon layersJournal of Applied Physics, 1981
- Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eVPhysical Review Letters, 1981
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- Phosphorus Isoconcentration Diffusion Studies in SiliconJournal of the Electrochemical Society, 1973
- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972