Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
- 1 May 2005
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 483-485, 989-992
- https://doi.org/10.4028/www.scientific.net/msf.483-485.989
Abstract
The degradation of diffused SiC PIN diodes during forward-biased operation was studied by first fabricating PIN diodes by diffusion of aluminum or boron into 4H-SiC substrates with n-type 10-15 µm thick epilayers doped by nitrogen up to 5x1015cm-3. The formed diodes were subjected to degradation testing under an applied current density of 200A/cm2 at room temperature. The majority of the Al diffused diodes demonstrated a voltage drift, ΔVf, of more than 2 V, while B-doped diodes showed no significant change in forward voltage. The EBIC mode of SEM was employed to monitor nucleation and expansion of stacking faults.Keywords
This publication has 15 references indexed in Scilit:
- Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodesJournal of Applied Physics, 2004
- Approaches to Stabilizing the Forward Voltage of Bipolar SiC DevicesMaterials Science Forum, 2004
- Core structure and properties of partial dislocations in silicon carbide p-i-n diodesApplied Physics Letters, 2003
- Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodesJournal of Applied Physics, 2002
- Dislocation evolution in 4H-SiC epitaxial layersJournal of Applied Physics, 2002
- Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC WafersMaterials Science Forum, 2002
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001
- Stacking fault energy of 6H-SiC and 4H-SiC single crystalsPhilosophical Magazine A, 2000
- Polytypic transformations in SiC: the role of TEMUltramicroscopy, 1993
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982