Optically controlled characteristics in an ion-implanted silicon MESFET
- 1 July 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (7) , 707-711
- https://doi.org/10.1016/0038-1101(86)90156-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Measurement and simulation of GaAs FET's under electron-beam irradiationIEEE Transactions on Electron Devices, 1983
- Microwave Characteristics of an Optically Controlled GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1983
- Short-channel MOST threshold voltage modelIEEE Journal of Solid-State Circuits, 1982
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977