Conduction-band offset in strained Al0.15Ga0.85As/In0.15Ga0.85As/GaAs pseudomorphic structures

20 November 1989

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 55 (21) , 2211-2213
https://doi.org/10.1063/1.102063

Abstract

We report a first determination of the conduction‐band offset in the strained‐layer Al_0.15Ga_0.85As/In_0.15Ga_0.85As/GaAs pseudomorphic structure. Two‐dimensional electron density and its effective mass are independently measured by Shubnikov–de Haas and cyclotron resonance experiments for a series of samples with a range of spacer thickness from 30 to 100 Å. Using a charge transfer model, the conduction‐band offset at the Al_0.15Ga_0.85As/In_0.15Ga_0.85As interface is found to be (255±35) meV.

Keywords

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