Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy
Open Access
- 15 August 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (4) , 1539-1541
- https://doi.org/10.1063/1.339624
Abstract
n+pp+GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular‐beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.This publication has 13 references indexed in Scilit:
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