Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

A technique is presented for measuring the density of interface traps versus energy $D_{\mathrm{IT}}\mathrm{(E)}$ using the Hall effect in metal-oxide-semiconductor samples. Good agreement is obtained between this Hall approach and standard $\mathrm{C–V}$ techniques in both SiC and silicon test devices. $D_{\mathrm{IT}}\mathrm{(E)}$ is found to be much higher in 4H–SiC compared to 6H devices oxidized at the same time. $D_{\mathrm{IT}}\mathrm{(E)}$ in both SiC poly types increases exponentially with energy approaching the conduction bandedge.