Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H– and 6H–SiC

Theoretical calculation of the electron Hall mobility and the Hall scattering factor in 4H– and 6H–SiC is performed based on the low-field transport model. Our mobility calculation as a function of temperature, net-doping concentration ${\mathrm{([N}}_D{\mathrm{]-[N}}_A\mathrm{]),}$ and compensation ratio ${\mathrm{([N}}_A{\mathrm{]/[N}}_D\mathrm{]),}$ where $N_D$ and $N_A$ are the donor (nitrogen) and acceptor concentrations, respectively, provides the theoretical values of the electron Hall mobility expected for the high quality SiC crystal. The results can be used for the evaluation of the crystalline quality of a given SiC sample. We also present the ratio of the Hall and drift mobility, i.e., the Hall scattering factor, which is needed to make a bridge between the experimentally measured Hall mobility and the theoretically calculated drift mobility using, for example, Monte Carlo simulation. Our calculations of both the electron Hall mobility and the Hall scattering factor are in very good agreement with the experimental results.