Theory of the electron mobility in n-type 6H–SiC
- 25 May 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (12) , 8193-8198
- https://doi.org/10.1063/1.370659
Abstract
We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H–SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H–SiC.This publication has 14 references indexed in Scilit:
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