Mapping of mobile charges on insulator surfaces with the electrostatic force microscope
- 13 September 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (11) , 1513-1515
- https://doi.org/10.1063/1.110759
Abstract
Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distribution of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p‐n junction and an open‐gate field‐effect transistor. The surface charge distribution and topography are imaged simultaneously on a micrometer scale.Keywords
This publication has 14 references indexed in Scilit:
- Charge flow during metal-insulator contactPhysical Review B, 1992
- Observation of single charge carriers by force microscopyPhysical Review Letters, 1990
- Contact electrification using force microscopyPhysical Review Letters, 1989
- Surface-accessible fet for gas sensingSensors and Actuators, 1983
- Hydrogen sensitive mos-structures part 2: characterizationSensors and Actuators, 1982
- Influence of insulator surface conduction on the transient response of MIS capacitorsPhysica Status Solidi (a), 1978
- Charge motion on silicon oxide surfacesSurface Science, 1967
- Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctionsSurface Science, 1964
- Charges on Oxidized Silicon SurfacesPhysical Review Letters, 1963
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953