Influence of insulator surface conduction on the transient response of MIS capacitors
- 16 January 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 45 (1) , K25-K28
- https://doi.org/10.1002/pssa.2210450149
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Field-enhanced carrier generation in MOS capacitorsSolid-State Electronics, 1974
- Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristicsIEEE Transactions on Electron Devices, 1973
- A linear-sweep MOS-C technique for determining minority carrier lifetimesIEEE Transactions on Electron Devices, 1972
- Interpretation of surface and bulk effects using the pulsed MIS capacitorSolid-State Electronics, 1971
- Charge motion on silicon oxide surfacesSurface Science, 1967
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966