The 1/f Noise MOS Transistors

1 August 1969

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 8 (8)
https://doi.org/10.1143/jjap.8.1020

Abstract

The low-frequency noise characteristics of MOS transistors with SiO₂ films formed by reactive sputtering as gate insulators were investigated. An attempt is made to analyze the characteristics on the basis of the tunneling model. Reasonable agreement of the experimental result with the theorectical characteristics is found. Some informations on the noise generation centers are obtained.

Keywords

LOW FREQUENCY NOISE

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