Structure and Electrical Properties of Thin Ta2O5 Deposited on Metal Electrodes
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S) , 1336
- https://doi.org/10.1143/jjap.37.1336
Abstract
The structure and electrical properties of chemical vapor deposition (CVD)-Ta2O5 thin films on Pt, Ru and poly-Si electrode were studied. With 750°C annealing after Ta2O5 deposition, a 12-nm-thick Ta2O5 on Pt and Ru shows a SiO2 equivalent thickness (t eq) of 0.9 nm. We found that Ta2O5 on Pt and Ru shows (110) and (001) orientation, respectively. There is no interaction between Ta2O5 and these electrodes with 750°C annealing. t eq on Pt and Ru decreases with annealing temperature increase. On the other hand, Ta2O5 on poly-Si is randomly oriented and its t eq does not change with annealing temperature increase. The relative dielectric constant of Ta2O5 on Pt and Ru, which is highly oriented with 750°C annealing, is estimated over 50. It is clear that the Ta2O5 electrical properties are strongly related with its crystallinity.Keywords
This publication has 5 references indexed in Scilit:
- Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]IEEE Electron Device Letters, 1996
- Stoichiometry measurement and electric characteristics of thin-film Ta2O5 insulator for ultra-large-scale integrationJournal of Applied Physics, 1993
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMsIEEE Transactions on Electron Devices, 1990
- Photo-Process of Tantalum Oxide Films and Their CharacteristicsJapanese Journal of Applied Physics, 1988