Marker Experiments for the moving Species in Silicides During Solid Phase Epitaxy of Evaporated Si
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on 〈Si〉Journal of Applied Physics, 1983
- Thermal formation of SiO2 films over NiSi, NiSi2 and CoSi2 via silicide decompositionThin Solid Films, 1983
- Behavior and Influence of Oxygen in Chromium Silicide FormationThin Solid Films, 1983
- Growth kinetics of planar binary diffusion couples: ’’Thin-film case’’ versus ’’bulk cases’’Journal of Applied Physics, 1982
- Investigation on TiSi2 thin-film oxidation by radioactive tracer techniqueApplied Physics Letters, 1982
- Metallurgical and electrical properties of chromium silicon interfacesSolid-State Electronics, 1980
- The formation of NiSi from Ni2Si studied with a platinum markerThin Solid Films, 1978
- Solid phase epitaxy in silicide-forming systemsThin Solid Films, 1977
- Dissociation mechanism for solid-phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) systemApplied Physics Letters, 1976
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975