Investigation on TiSi2 thin-film oxidation by radioactive tracer technique
- 1 February 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (3) , 263-265
- https://doi.org/10.1063/1.93068
Abstract
The tracer technique using radioactive 31Si (T1/2 = 2.62h) was performed to study the oxidation kinetics of TiSi2 thin films on single and polycrystalline silicon. After depositing 1000‐Å 31Si which had been activated in a nuclear reactor, radioactive TiSi*2 was formed by coating 500‐Å Ti film in situ and then annealing at 850 °C for 45 min. On wet oxidation, the substrate silicon atoms transported through the TiSi*2 layer by grain boundary and/or interstitial diffusion. These results were confirmed by Geiger counting after etching the outer SiO2 layer step by step.Keywords
This publication has 5 references indexed in Scilit:
- Oxidation mechanisms in TiSi2 films on single silicon substratesApplied Physics Letters, 1980
- Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and InterconnectsIEEE Journal of Solid-State Circuits, 1980
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Oxidation of tantalum disilicide on polycrystalline siliconJournal of Applied Physics, 1980
- Radioactive silicon as a marker in thin-film silicide formationApplied Physics Letters, 1977