Oxidation mechanisms in TiSi2 films on single silicon substrates
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9) , 824-826
- https://doi.org/10.1063/1.92094
Abstract
Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two‐step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.Keywords
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