Thermal formation of SiO2 films over NiSi, NiSi2 and CoSi2 via silicide decomposition
- 1 July 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 105 (3) , 285-292
- https://doi.org/10.1016/0040-6090(83)90292-4
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Thermal oxidation of nickel disilicideApplied Physics Letters, 1982
- A Xe marker study of the transformation of Ni2Si to NiSi in thin filmsPhysica Status Solidi (a), 1981
- Studies of steam-oxidized WSi2 by Auger sputter profilingApplied Physics Letters, 1980
- Oxidation of tantalum disilicide on polycrystalline siliconJournal of Applied Physics, 1980
- Characterization of Thin Film Molybdenum Silicide OxideJournal of the Electrochemical Society, 1980
- Kinetics of the thermal oxidation of WSi2Applied Physics Letters, 1979
- The formation of silicides in Mo-W Bilayer films on si substrates: A marker experimentJournal of Electronic Materials, 1979
- Oxidation of sputtered molybdenum silicide thin filmsApplied Physics Letters, 1978
- An alternative marker experiment in the formation of Mo and W silicidesApplied Physics Letters, 1978
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978