An alternative marker experiment in the formation of Mo and W silicides
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4) , 289-290
- https://doi.org/10.1063/1.90341
Abstract
A novel diffusion ’’marker’’ has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a ’’marker’’ to permit identification of the moving species (Si at T<1000 °C).Keywords
This publication has 11 references indexed in Scilit:
- Growth mechanism for solid-phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer techniqueJournal of Applied Physics, 1977
- Radioactive silicon as a marker in thin-film silicide formationApplied Physics Letters, 1977
- Silicidbildung in dünnen molybdän- und wolframschichten auf einkristallinen siliziumsubstraten bei relativ niedrigen temperaturenThin Solid Films, 1976
- Tungsten as a marker in thin-film diffusion studiesApplied Physics Letters, 1976
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Iron silicide thin film formation at low temperaturesThin Solid Films, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Reaction kinetics of tungsten thin films on silicon (100) surfacesJournal of Applied Physics, 1973
- Analysis of formation of hafnium silicide on siliconApplied Physics Letters, 1973
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972