Electrical properties of devices fabricated on laser-etched silicon
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5) , 262-264
- https://doi.org/10.1109/55.710
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Rapid direct writing of high-aspect ratio trenches in silicon: Process physicsJournal of Vacuum Science & Technology B, 1988
- Rapid direct writing of high-aspect-ratio trenches in siliconApplied Physics Letters, 1987
- A study of trenched capacitor structuresIEEE Electron Device Letters, 1985
- A review of laser–microchemical processingJournal of Vacuum Science & Technology B, 1983
- U-Groove Isolation Technology for High Density Bipolar LSI'sJapanese Journal of Applied Physics, 1982
- Deep trench isolated CMOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Laser chemical technique for rapid direct writing of surface relief in siliconApplied Physics Letters, 1981
- DEFECTS IN LASER-PROCESSED SEMICONDUCTORSPublished by Elsevier ,1980