Ion Implantation of B+ in n-Hg0.8Cd0.2Te
- 16 August 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (2) , K133-K136
- https://doi.org/10.1002/pssa.2210720253
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Infrared Reflection Spectroscopy of Ion-Implanted n-Hgo.8Cdo.2TePhysica Status Solidi (a), 1982
- Range and range straggling of ion-implanted boron in Cd0.2Hg0.8TePhysica Status Solidi (a), 1980
- Electrical properties of ion-implanted layers in Hg0.79Cd0.21TeJournal of Applied Physics, 1979
- Doping properties of selected impurities in Hg1−x Cdx TeJournal of Electronic Materials, 1977
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972