Electrical properties of ion-implanted layers in Hg0.79Cd0.21Te

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Abstract
The influence of ion‐irradiation damage on the electrical properties of Hg0.79Cd0.21Te has been investigated. A large damage‐induced n‐type conductivity with sheet carrier concentration up to approximately 1014 cm−2 and sheet resistance up to 10 Ω/square at 77 K was found for doses of 1×1015 ions/cm2 at 150 keV. The observed n‐type conductivity is produced by various implanted ions regardless of whether they are donors or acceptors. The implanted n‐type layer maintains its properties when subjected to temperatures as high as 120 °C. The damage is slightly annealed for this moderate treatment: the conductivity increases slightly, the sheet electron concentration decreases, and the effective mobility increases. The results also show that the implanted layer can be utilized for surface passivation of n‐type photoconductors and for making Ohmic contacts to n‐type material.