Impact ionization in Ga1−xAlxSb

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Abstract
We have measured impact ionization rates in Ga1−xAlxSb at x=0 and 0.08. For these Al contents, the ratio values of the spin-orbit splitting energy Δ to the energy gap Eg are, respectively, greater and lower than unity. We have determined that the ratio of the ionization coefficients kp/kn is greater than unity for both compositions and that it is much lower (kp/kn≊2) than the value (≳10) determined on our layers for x=0.04. Multiplication noise measurements confirm these results. The comparison to other published data show that the ionization in these antimonide compounds is not yet elucidated.