Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaN

This publication has 6 references indexed in Scilit:

• Characteristics of InGaN multi-quantum-well-structure laser diodes
  Applied Physics Letters, 1996
• Very low resistance multilayer Ohmic contact to n-GaN
  Applied Physics Letters, 1996
• Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diode
  Applied Physics Letters, 1995
• High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
  Japanese Journal of Applied Physics, 1995
• High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
  Applied Physics Letters, 1993
• Metal semiconductor field effect transistor based on single crystal GaN
  Applied Physics Letters, 1993