Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4) , 197-201
- https://doi.org/10.1016/0169-4332(93)90089-t
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Investigations of MOCVD-grown AlInAs-InP type II heterostructuresSemiconductor Science and Technology, 1992
- Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures: The effect of a pulse metalorganic flowJournal of Applied Physics, 1992
- Highly doped In0.52Al0.48As growth and ohmic contact formationSemiconductor Science and Technology, 1991
- Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasersJournal of Crystal Growth, 1991
- Modulation-doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxyApplied Physics Letters, 1990
- OMVPE growth of AlInAs and device quality AlInAs-based heterostructuresJournal of Crystal Growth, 1988
- Electron mobilities of AlInAs and AlInAs/InP heterostructuresJournal of Applied Physics, 1988
- Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfacesPhysica B+C, 1985
- Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verificationApplied Physics Letters, 1984