Atomic layer molecular beam epitaxy (ALMBE): growth kinetics and applications
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 194-199
- https://doi.org/10.1016/0022-0248(91)90970-g
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Growth process of III–V compound semiconductors by migration-enhanced epitaxyJournal of Crystal Growth, 1990
- Surface diffusion and related phenomena in MBE growth of III–V compoundsJournal of Crystal Growth, 1990
- Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applicationsApplied Physics A, 1989
- Atomic layer molecular beam epitaxy growth of InAs on GaAs substratesApplied Physics A, 1989
- Molecular-beam epitaxy growth mechanisms on GaAs(100) surfacesJournal of Vacuum Science & Technology B, 1987
- Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAsJournal of Crystal Growth, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975