6H silicon carbide MOSFET modelling for high temperature analogue integrated circuits (25–500°C)
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Circuits, Devices and Systems
- Vol. 143 (2) , 115
- https://doi.org/10.1049/ip-cds:19960092
Abstract
No abstract availableKeywords
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