High-temperature latchup characteristics in VLSI CMOS circuits
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2424-2426
- https://doi.org/10.1109/16.8826
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Temperature dependence of latch-up phenomena in scaled CMOS structuresIEEE Electron Device Letters, 1986
- High-temperature diffusion leakage-current-dependent MOSFET small-signal conductanceIEEE Transactions on Electron Devices, 1984
- Electrical Characteristics of Large-Scale Integration Silicon MOSFET's at Very High Temperatures,Part III: Modeling and Circuit BehaviorIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1984
- Temperature dependence of latchup in CMOS circuitsIEEE Electron Device Letters, 1984
- Electron and hole mobilities in silicon as a function of concentration and temperatureIEEE Transactions on Electron Devices, 1982