Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)
- 10 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (19) , 2827-2829
- https://doi.org/10.1063/1.124027
Abstract
The thermal stability of cubic-phase GaN (c-GaN) films are investigated by photoluminescence (PL) and Raman scattering spectroscopy. C-GaN films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition. PL measurements show that the near-band-edge emissions in the as-grown GaN layers and thermally treated samples are mainly from c-GaN. No degradation of the optical qualities is observed after thermal annealing. Raman scattering spectroscopy shows that the intensity of the E2 peak from hexagonal GaN grains increases with annealing temperature for the samples with poor crystal quality, while thermal annealing up to 1000 °C has no obvious effect on the samples with high crystal quality.This publication has 12 references indexed in Scilit:
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Growth and characterization of cubic GaNJournal of Crystal Growth, 1997
- Crystalline Structure Changes in GaN Films Grown at Different TemperaturesJapanese Journal of Applied Physics, 1997
- Optical gain of strained hexagonal and cubic GaN quantum-well lasersApplied Physics Letters, 1996
- High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopantApplied Physics Letters, 1996
- MBE growth of cubic GaN on GaAs substratesPhysica Status Solidi (b), 1996
- Temperature-mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substratesApplied Physics Letters, 1995
- Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopyApplied Physics Letters, 1995
- p-type zinc-blende GaN on GaAs substratesApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992