Microwave plasma assisted LCVD growth and characterization of GaN
- 1 July 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 100-101, 643-646
- https://doi.org/10.1016/0169-4332(96)00355-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Growth of GaN films by combined laser and microwave plasma enhanced chemical vapour depositionJournal of Crystal Growth, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxyApplied Physics Letters, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- In situ monitoring and Hall measurements of GaN grown with GaN buffer layersJournal of Applied Physics, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969