Reactive etching mechanism of tungsten silicide in CF4-O2 plasma
- 1 August 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 118 (2) , 149-154
- https://doi.org/10.1016/0040-6090(84)90066-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Silicon etching mechanism and anisotropy in CF4+O2 plasmaJournal of Applied Physics, 1983
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- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980
- 1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspectiveIEEE Journal of Solid-State Circuits, 1979