Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density
- 1 June 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3134-3136
- https://doi.org/10.1063/1.328060
Abstract
The addition of a small concentration of suitably chosen noble gas to a reactive plasma is shown to permit the determination of the functional dependence of reactive particle density on plasma parameters. Examples illustrating the simplicity of this method are presented using F atomic emission from plasma-etching discharges and a comparison is made to available data in the literature.This publication has 7 references indexed in Scilit:
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Optical detector to monitor plasma etchingJournal of Electronic Materials, 1978
- End Point Determination of Aluminum CCl4 Plasma Etching by Optical Emission SpectroscopyJournal of the Electrochemical Society, 1978
- The Loading Effect in Plasma EtchingJournal of the Electrochemical Society, 1977
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977
- Plasma etching in integrated circuit manufacture—A reviewJournal of Vacuum Science and Technology, 1977