Anisotropy control in the reactive ion etching of InP using oxygen in methane/hydrogen/argon
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Self-selective formation of organic masks for methane/hydrogen reactive ion etching of InPPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Anisotropic reactive ion etching of InP in methane/hydrogen based plasmasJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Nanostructure fabrication in InP and related compoundsJournal of Vacuum Science & Technology B, 1990