Mapping of conduction bands in GaAs by angle-resolved photoemission
- 30 June 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 30 (11) , 743-747
- https://doi.org/10.1016/0038-1098(79)91173-6
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Experimental determination of the valence band structure of PbSeSolid State Communications, 1978
- Bulk versus surface effects in normal photoemission from Cu(110) in the rangeeVPhysical Review B, 1978
- Angular-resolved photoemission from low-index crystal faces of silver—bulk and surface contributionsPhysical Review B, 1978
- Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangementsJournal of Vacuum Science and Technology, 1977
- Valence Band Structure of PbS from Angle-Resolved PhotoemissionPhysical Review Letters, 1977
- Angle-resolved photoemission studies of surface states on (110) GaAsJournal of Vacuum Science and Technology, 1976
- Photoemission studies of the GaAs-Cs interfacePhysical Review B, 1975
- Theoretical Analyses of the Angular-Dependent Photoemission from GaAsPhysical Review Letters, 1975
- Nonlocal pseudopotentials for Ge and GaAsPhysical Review B, 1974
- Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopyPhysical Review B, 1974