Comparison of cw laser-annealed and electron-beam annealed Si
- 1 October 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6437-6440
- https://doi.org/10.1063/1.328552
Abstract
Si samples implanted with As+ have been annealed with a modified commercial scanning electron microscope and with a scanning cw Ar+ laser. A comparison of these two techniques is presented, using electron-beam-induced current as a probe of minority-carrier effects. With a minimum of parameter optimization, it is found that electron-beam annealing is usually superior to laser annealing with respect to both lateral and vertical uniformity.This publication has 10 references indexed in Scilit:
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