Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3) , 63-69
- https://doi.org/10.1016/0029-554x(81)90984-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The use of PIXE for the measurement of thorium and uranium at μgg−1 levels in thick ore samplesNuclear Instruments and Methods, 1980
- Trace element analysis in liquids by proton induced X-ray emissionNuclear Instruments and Methods, 1977
- Trace element analysis by ion induced X-ray emission spectroscopyNuclear Instruments and Methods, 1977
- Analytical application of particle induced X-ray emissionNuclear Instruments and Methods, 1976
- Ion Implantation Gettering of Gold in SiliconJournal of the Electrochemical Society, 1976
- Diffusion Gettering of Au and Cu in SiliconJournal of the Electrochemical Society, 1975
- Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in SiJournal of Applied Physics, 1975
- Proton induced X-ray emission as a tool for trace element analysisNuclear Instruments and Methods, 1974
- Gettering rates of various fast-diffusing metal impurities at ion-damaged layers on siliconApplied Physics Letters, 1972
- Metal Precipitates in Silicon p-n JunctionsJournal of Applied Physics, 1960