Nature of the Pb1 interface defect in (100)SiSiO2 as evealed by electron spin resonance 29Si hyperfine structure
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 113-116
- https://doi.org/10.1016/s0167-9317(99)00350-0
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Electron spin resonance features of interface defects in thermal (100)Si/SiO2Journal of Applied Physics, 1998
- Undetectability of the point defect as an interface state in thermalJournal of Physics: Condensed Matter, 1998
- Electron-paramagnetic-resonance study of the microscopic structure of the Si(001)-interfacePhysical Review B, 1995
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994
- Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator filmsApplied Physics Letters, 1987
- Structural Features at the Si — SiO2 Interface*Zeitschrift für Physikalische Chemie, 1987
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961