Precise lattice parameter determination of dislocation-free gallium arsenide—II: Chemical and electrical measurements
- 30 April 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (4) , 335-339
- https://doi.org/10.1016/0038-1101(76)90032-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electrochemical capacitance characterization of n-type gallium arsenideJournal of Applied Electrochemistry, 1974
- Defektstrukturuntersuchungen an GaAs-Einkristallen mit Hilfe der IR-MikroskopieCrystal Research and Technology, 1973
- Pseudopotential Calculations of Electronic Charge Densities in Seven SemiconductorsPhysical Review B, 1971
- Electrical and electron microscope studies of the annealing of tellurium-doped gallium arsenidePhilosophical Magazine, 1971
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Strain Compensation in Silicon by Diffused ImpuritiesJournal of the Electrochemical Society, 1969
- Effect of Carbon on the Lattice Parameter of SiliconJournal of Applied Physics, 1968
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966
- Phase extent of gallium arsenide determined by the lattice constant and density methodActa Crystallographica, 1965
- Length Change of Electron-Irradiated GermaniumPhysical Review Letters, 1964