Dissociation effects of H and H+2 on clean III–V compounds
- 1 April 1991
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 170 (1-4) , 457-468
- https://doi.org/10.1016/0921-4526(91)90160-g
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfacesPhysical Review B, 1990
- Interaction of atomic hydrogen with InP(100): Comparison with the cleaved surface interactionSurface Science, 1988
- Interaction of atomic hydrogen with cleaved InP. II. The decomposition stageJournal of Vacuum Science & Technology A, 1988
- Interaction of atomic hydrogen with cleaved InP. I. The adsorption stageJournal of Vacuum Science & Technology A, 1988
- Effects of atomic hydrogen on the surface properties of cleaved GaAs(110)Semiconductor Science and Technology, 1987
- Interaction of ionized hydrogen with cleaved GaAs. Comparison with atomic hydrogen interactionRevue de Physique Appliquée, 1987
- Synchrotron radiation investigation of H: GaAs(110)Surface Science, 1985
- Hydrogen adsorption on GaAs(110) studied by temperature-programmed desorptionPhysical Review B, 1984
- Oxygen and hydrogen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Hydrogen plasma etching of semiconductors and their oxidesJournal of Vacuum Science and Technology, 1982