Interaction of ionized hydrogen with cleaved GaAs. Comparison with atomic hydrogen interaction

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Abstract
The interaction of hydrogen ions H+2 with the (110) surface of GaAs prepared by cleavage under ultrahigh vacuum has been studied by photoemission yield spectroscopy and controlled by Auger electron spectroscopy and low energy electron diffraction. The ions, having a kinetic energy lower than 100 eV, were produced by an excitation cell connected to the working chamber by a hole 0.5 mm in diameter and could be deflected onto the sample surface. The interaction of H+2 with GaAs(110) at progressively increasing doses begins with the two successive stages which have been characterized from the interaction of atomic hydrogen with the same substrate : first an adsorption stage during which hydrogen binds covalently to both Ga and As, then a decomposition stage with formation of Ga metal and, most likely, arsine AsH3 which remains adsorbed on the surface. As the dose of hydrogen ions keeps on increasing, a layer by layer etching of the surface is observed with removal of the hydrogenated compound

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