A photoemission “black hole” in heavily hydrogenated GaAs(1 1 0) surfaces
- 31 January 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 57 (2) , 133-136
- https://doi.org/10.1016/0038-1098(86)90528-4
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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