Metal reactions to anodized porous silicon crystals
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 1127-1134
- https://doi.org/10.1016/0169-4332(88)90426-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 7 references indexed in Scilit:
- Stuffing of Noble Metals into Anodized Porous Silicon by Direct EvaporationJapanese Journal of Applied Physics, 1987
- Metallurgical aspects of the formation of silicidesThin Solid Films, 1986
- Low temperature material reaction at the Ti/Si(111) interfaceJournal of Vacuum Science & Technology A, 1986
- Sputter deposited titanium disilicide at high substrate temperaturesApplied Physics Letters, 1984
- ELS study on the initial stage of Ti-silicide formation on Si(1 1 1) at room temperatureSolid State Communications, 1984
- A Quantitative Analysis of Electron Energy Loss Spectra of keV Electrons from Thin-Film-Substrate SystemJournal of the Physics Society Japan, 1981
- General formalism for quantitative Auger analysisSurface Science, 1975