Structural characterization of InGaAs/InAlAs quantum wells grown on 0 (111)-InP substrates
- 1 October 1997
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 28 (8-10) , 999-1003
- https://doi.org/10.1016/s0026-2692(96)00140-1
Abstract
No abstract availableKeywords
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